Ti:sapphire rib channel waveguide fabricated by reactive ion etching of a planar waveguide
نویسندگان
چکیده
منابع مشابه
Ytterbium-Doped Glass Waveguide Laser Fabricated by Ion Exchange
A ytterbium-doped, glass, channel waveguide laser, fabricated by ion exchange, is reported. The 2.2-cm long device, using broad-band 4% output couplers, lased in the vicinity from 1020 to 1030 nm when pumped by a Ti : sapphire laser operating at 910 nm. A lasing threshold of 50 mW (launched pump) and a slope efficiency of 5% were measured. Device parameters, including fluorescence lifetimes, em...
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A novel scheme is presented that can be used to efficiently pump optical waveguide amplifiers. It is based on the coupling between two adjacent waveguides, where pump light is gradually coupled from a nonabsorbing pump waveguide into the amplifier waveguide. The coupling between the waveguides in such a configuration is calculated using an improved coupled mode theory (CMT). The proposed distri...
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Introduction: Er3+:Yb3+ codoping has become an effective method for producing short, efficient lasers and amplifiers in the long haul telecommunications wavelength range. Ytterbium codoping increases the pump absorption near 980nm and efficient energy transfer between the Yb’’ and the Er3+ ions enables the operation of centimetre long lasers with low Er” concentrations. This mechanism was first...
متن کاملSingle-transverse-mode Ti:sapphire rib waveguide laser.
Laser operation of Ti:sapphire rib waveguides fabricated using photolithography and ion beam etching in pulsed laser deposited layers is reported. Polarized laser emission was observed at 792.5 nm with an absorbed pump power threshold of 265 mW, which is more than a factor of 2 lower in comparison to their planar counterparts. Measured beam propagation factors M2x and M2y of 1.3 and 1.2, respec...
متن کاملLaser operation of a Tm:Y2O3 planar waveguide.
We demonstrate the first Tm-doped yttria planar waveguide laser to our knowledge, grown by pulsed laser deposition. A maximum output power of 35 mW at 1.95 μm with 9% slope efficiency was achieved from a 12 μm-thick film grown on a Y(3)Al(5)O(12) substrate.
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ژورنال
عنوان ژورنال: Applied Physics B
سال: 2002
ISSN: 0946-2171,1432-0649
DOI: 10.1007/s00340-002-0952-2